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Subjects Manipulation of a Kondo state using spin injection technique
Representative researcher Materials and Structures Laboratory,Tokyo Institute of Technology
Tomoyasu TANIYAMA
Spin injection into a nonmagnetic material has attracted much interest for the development of novel spin electronic devices. Recently, we have studied spin accumulation effect on the Kondo state of CuFe alloy, indicating that spin polarized electrons suppress the Kondo effect, while a full description of the spin accumulation effect on the Kondo effect has not been clear, yet. In this study, we report on spin accumulation effect on the Kondo state of CuFe wires using lateral spin valve structures with a CuFe/Co wire junction. Also, spin accumulation effect at a CuFe/GaAs interface is investigated under optical spin orientation condition which excites spin polarized electrons in GaAs efficiently. These combined results indicate that spin accumulation in the Kondo alloy CuFe suppresses the Kondo effect due to the splitting of chemical potentials for spin-up and spin-down channels near the interfaces. The results are discussed in detail.