Japanese Correspondence
Yamada Science Foundation
YSF TOPOverview of YSFSupport for ScienceYamada Conference : YCYamada Symposium : YSResearch and YC YS ReportsPastsupport

Progress Report of YSF Supported Science Program


Conference Summary

returns to table
54th Shallow-Level Centers in Semiconductors
The 54th Yamada Conference on Shallow-Level Centers in Semiconductors (SLCS-9) was held in Awaji Yumebutai International Conference Center, Awaji Island, Hyogo, Japan, from September 24 to 27, 2000. We would like to express our sincere thanks to the Yamada Science Foundation for the support and encouragement which enabled us to have such an active conference. Shallow-Level Centers in Semiconductors (SLCS-9) is a part of series initiated in Berkeley (1984) and continued in Trieste (1986), Linköping (1988), London (1990), Kobe (1992), Berkeley (1994), Amsterdam (1996), and Montpellier (1998). The SLCS-9 is a satellite conference of the 25th International Conference on the Physics of Semiconductors, which was held in Osaka from September 18 to 22, 2000. The SLCS-9 covers a broad range of the topics concerned with the fundamental properties of shallow-levels in semiconductors and with impurity issues of importance to semiconductor technology. Conference topics were (1) Physics and Control of Shallow-Levels in Wide-Gap semiconductors, (2) Shallow Dopants in Semiconductors, (3) Shallow-deep Transition in Semiconductors, (4) Tunneling, Hopping and Metal-Insulator Transition, (5) Impurity Pairs and Complexes, (6) Hydrogen and Related Topics in Semiconductors, (7) Impurity Related Properties of Low Dimensional System and (8) Vibrational Properties of Shallow Impurities.
We would like to thank the members of the International Advisory Committee and the Program Committee for their interesting and fruitful advice.
The scientific program began in the afternoon of Sunday, September 24, and ended on Wednesday, September 27 in the afternoon. The meeting was held at Awaji Yumebutai International Conference Center. We organized a special session on Physics and Control of Shallow-Levels in Wide-Gap Semiconductors in September 24. This topic is related to the valence control of the wide-gap semiconductors, such as GaN, diamond and ZnO. On Tuesday, September 26 afternoon, there was an excursion followed by a banquet. The conference ran for three and a half day and was organized, as usual, with oral sessions having both invited and selected talks and poster sessions. 111 participants came from 20 countries (domestic participants: 44 and foreign participants: 67). The conference concluded with summarizing lectures on the final day by Prof. C.A.J. Ammerlaan.
Our thanks are also obviously due to all the participants and authors who contributed to the success of the SLCS-9 Conference and the high scientific quality of the Proceedings.
Hiroshi Katayama-Yoshida Chairman of SLCS-9
Masashi Suezawa
Program Chairman of SLCS-9
Hiroyasu Nakata
Guest Editor of SLCS-9